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Silicon N Channel MOS Type
Low Drain-Source ON Resistance
RD(ON) = 1.9 Ohms (Typ.)
High Forward Transfer Admittance
Yfs = 3.0 S (Typ.)
Low Leakage Current
IDSS = 100 uA (Max.) @ VDS = 600V
Enhancement-Mode
Vth = 2.1 - 4.0 V @ VDS = 10 V, ID = 1 mA
Applications
High Speed Switching
HIGH Current Switching