- On request
(Our products have limited warranty, please check our terms)
(Delivery 1-2 days for products in stock)
N-CHANNEL POWER MOS FET
Low ON-resistance
RDS(on)1 = 1.4 Ohms (Vgs = 10 V, ID = 8.0 A)
RDS(on)2 = 0.17 Ohms MAX. (@VGS = $ V, ID = 8.0 A) Low Ciss = 790 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
Semiconductors High Power Equipment Repair