- On request
FQP17P06
$5.25
No tax
FQP17P06
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
Silicon N Channel MOS Type Field Effecr Transistor
Low Drain-Source ON Resistance - RDS(ON) = 1.0 Ohms (Typ.)
High Forward Transfer Admittance Yfs = 4.0S (Typ.)
Low Leakage Current - IDSS = 300uA (Max.) (VDS = 10, ID = 1mA)
Enhancement-Mode
- Vth = 1.5 - 3.5V (VDS = 10V, ID = 1mA)
Aplications
Applications
High Speed, High Current Switching
FQP17P06
Specific References
- MPN
- FQP17P06
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