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MG800J1US51
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  • MG800J1US51

MG800J1US51

$202.13
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DatasheetMG800J1US51

800A/600V/1U

No identificado

Delivery time :

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • The Electrodes are Isolated from Case
  • High Input Impedance
  • Enhancement-Mode
  • High Speed :
  • tf=0.30us (Max.) (IC=800A)
  • trr=0.5us (Max.) (IF=800A)
  • Low Saturation Voltage :
  • VCE(sat) = 2.70V (Max.) (IC=800A)
  • Outline : TOSHIBA 2-109E1A

Aplications

  • Applications
  • High Power Switching
  • Motor Control

Toshiba * Transistor

Toshiba

MG800J1US51

IGBT 800A 600V SINGLE

MG800J1US51

Specific References

MPN
MG800J1US51
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