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MG800J1US51
202,13 $
Nessuna tassa
MG800J1US51
Política de seguridad
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Features
SILICON N CHANNEL IGBT MODULE
The Electrodes are Isolated from Case
High Input Impedance
Enhancement-Mode
High Speed :
tf=0.30us (Max.) (IC=800A)
trr=0.5us (Max.) (IF=800A)
Low Saturation Voltage :
VCE(sat) = 2.70V (Max.) (IC=800A)
Outline : TOSHIBA 2-109E1A
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG800J1US51
IGBT 800A 600V SINGLE
MG800J1US51
Riferimenti Specifici
- MPN
- MG800J1US51
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