- Out-of-Stock
RJH60F0DPK
$6.56
No tax
RJH60F0DPK
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
- Silicon N Channel IGBT
- Low collector to emitter saturation voltage
- VCE(sat) = 1.4 V typ. (at Ic = 25 A, VGE = 15 V, Ta = 25 C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching
- tf = 90 ns typ. (at Ic = 30 A, Vcc = 400 V, Vge = 15 V, Rg = 5 Ohms, Ta = 25 C, inductive load)
Aplications
- Semiconductors High Power Equipment Repair
RJH60F0DPK
Specific References
- MPN
- RJH60F0DPK
Comments (0)
No customer reviews for the moment.
16 other products in the same category:
Viewed products
