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RJH60F0DPK
6,56 $
Nessuna tassa
RJH60F0DPK
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Features
Silicon N Channel IGBT
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at Ic = 25 A, VGE = 15 V, Ta = 25 C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 90 ns typ. (at Ic = 30 A, Vcc = 400 V, Vge = 15 V, Rg = 5 Ohms, Ta = 25 C, inductive load)
Aplications
Semiconductors High Power Equipment Repair
RJH60F0DPK
Riferimenti Specifici
- MPN
- RJH60F0DPK
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