- Out-of-Stock
RJH60F7
$13.13
No tax
RJH60F7
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
- Silicon N Channel IGBT
- Low collector to emitter saturation voltage
- VCE(sat) = 1.35 V typ. (at Ic = 50 A, Vge = 15 V, Ta = 25 C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching
- tf=74ns typ. (at Ic_30 A, VCE = 400 V, VGE=15 V, Rg = 5 Ohms, Ta = 25C, inductive load
Aplications
- Semiconductors High Power Equipment Repair
RJH60F7
Specific References
- MPN
- RJH60F7
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