- On request
RJH60F7
13,13 $
Aucune taxe
RJH60F7
Política de seguridad
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Features
Silicon N Channel IGBT
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at Ic = 50 A, Vge = 15 V, Ta = 25 C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf=74ns typ. (at Ic_30 A, VCE = 400 V, VGE=15 V, Rg = 5 Ohms, Ta = 25C, inductive load
Aplications
Semiconductors High Power Equipment Repair
RJH60F7
Références spécifiques
- MPN
- RJH60F7
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