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MIG10J503
39,38 $
Sin impuestos
MIG10J503
Security policy
(Los productos cuentan con garantía limitada, por favor revisa nuestras condiciones)
Delivery policy
(Envíos de 1-2 días hábiles para productos de stock)
Features
INTELLIGENT POWER MODULE
The 4th generation trench gate thin wafer
NPT IGBT is adopted
FRD is built in
The level shift circuit by high-voltage IC
built in
The simplification of a high side driver power
supply is possible by the bootstrap system
Short Circuit Protection, Over Temperature
protection and the Power Supply Under Voltage
Protection function are built in
Short Circuit protection and Over Temperature
Protection state are outputted
The lower arm emitter terminal has been
independent by each phase for the purpose of
the current detection at the time of vector control
Low thermal resistance by adoption of original
high thermal conduction resin
Since this product is MOS structure, it should be
careful of static electricity in the case of handling
Aplications
Semiconductors High Power Equipment Repair
MIG10J503
Referencias específicas
- MPN
- MIG10J503
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