MG25J6ES40

• SILICON N CHANNEL IGBT MODULE
• Features
• The Electrodes are Isolated from Case
• High Input Impedance
• 6 IGBTs Built Into 1 Package
• Enhancement-Mode
• Low Saturation Voltage :
• VCE(sat) = 3.5 V (Max.) (IC = 25A)
• High Speed :
• tf=0.35us (Max.) (IC = 25A)
• trr = 0.15us (Max.) (IF = 25A)

• Applications
• High Power Switching
• Motor Control

Marca:

No identificado

Características electricas: 25A/600V/6U