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N-CHANNEL POWER MOS FET
Low On-Resistance
RDS(ON)1 = 70 mOhms MAX. (@ VGS = 10 V, ID = 10 A)
RDS(ON)2 = 95 mOhms MAX. (@VGS = 4 V,, ID = 10 A)
Low Ciss Ciss = 860 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
Semiconductors High Power Equipment Repair