• On request
GT8J101
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  • GT8J101

GT8J101

5,25 $
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TRANSISTORES N MOS

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DatasheetGT8J101

8A/600V/1U

No Identificado

Delivery time :

Quantité
On request

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Features

SILICON N-CHANNEL IGBT

High Input Impedance

High Speed : tf=0.5us (MAX.)

Low Saturation Voltage : VCE(sat)= 4.0 V (Max.)

Enhancement-mode

Aplications

Semiconductors High Power Equipment Repair

Miscellaneous * Semiconductor

Miscellaneous

GT8J101

Semiconductor

GT8J101

Références spécifiques

MPN
GT8J101
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