- On request
IRGS30B60KPBF
5,25 $
Nessuna tassa
IRGS30B60KPBF
Política de seguridad
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Features
INSULSTED GATE BIPOLAR TRANSISTOR
Low VCE (on) Non Punch Through IGBT Technology
10us Short Circuit Capability
Square RBSOA
Positive BCE (on) Temperature Coefficient
Maximum Junction Temperature rated at 175 C
Lead-Free
Aplications
Semiconductors High Power Equipment Repair
IRGS30B60KPBF
Riferimenti Specifici
- MPN
- IRGS30B60KPBF
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