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MODULOS IGBT
Última actualización
220A/1200V/2U
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IGBT MODULE
MOS input (voltage controlled)
N channel, Homogeneous Si
Low inductance case
Very low tail current with low temperature
dependence
High short circuit capability, self limiting to
6 Icnom
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using DCB Direct
Copper Bonding Technology
Large clearance ( 12 mm ) and creepage
distances ( 20 mm )
Applications
Switching, not for linear use
AC-inverter drive
Semikron
SKM300GB123DH6
IGBT