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MG300Q1US1
$94.68
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MODULOS IGBT DE CANAL N
Última actualización
MG300Q1US1300A/1200V/1U
No Identificado
Delivery time :
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Features
SILICON N CHANNEL IGBT MODULE
High input impedance
High speed :
tf= 1.0us (Max.) trr=0.5us (Max.)
Low saturation voltage :
VCE(sat) = 2.7V (Max.)
Enhancement mode
The electrodes are isolated from case
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG300Q1US1
IGBT 300A 1200V SINGLE
MG300Q1US1
Specific References
- MPN
- MG300Q1US1
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MODULOS IGBT DE CANAL N
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300A/1200V/1U
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