- On request
MIG20J503H
$ 39,38
Sem imposto
MIG20J503H
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
INTELLIGENT POWER MODULE
The 4th generation trench gate thin wafer
NPT IGBT is adopted
FRD is built in
The level shift circuit by high voltage IC is
built in
The simplification of a high side driver power
is possible by the bootstrap system
Short circuit protection and over temperature
protection and the power supply under voltage
protection function are built in
Short circuit protection and over temperature
protection state are outputted
The lower arm emitter terminal has been
independent by each phase for the purpose of
the current detection at time of vector control
Low thermal resistance by adoption of original
high thermal conduction resin
Since this product is MOS structure, it should be
careful of static electricity i the case of handling
Aplications
Semiconductors High Power Equipment Repair
MIG20J503H
Referências específicas
- MPN
- MIG20J503H
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