- On request
MODULOS IGBT DE CANAL N
Última actualización
50A/600V/2U
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SILICON N CHANNEL IGBT MODULE
High Input Impedance
High Speed : tf=0.35us (Max)
trr=0.15us (Max)
Low Saturationn Voltage : VCE(sat)=3.5V (Max)
Includes a Complete Half Bridge in One Package
Enhancement-Mode
The Electrodes are Isolated from Case
Applications
HIGH POWER SWITCHING
MOTOR CONTROL
Toshiba
MG50J2YS40
IGBT 50A 600V DUAL