- On request
2SK1058
$ 13,13
Sem imposto
2SK1058
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
Silicon N Channel MOS FET
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristic
Equipped with gate protection diodes
Suitable foe audio power amplifier
Low drain-source ON resistance : RDS (ON)= 3.0 Ohms (typ.)
High forward transfer admittance : Yfs = 2.0 S (typ.)
Low leakage current : IDSS= 300uA (max) (VDS=800 V)
Enhancement mode : Vth = 1.5 to 3.5 V (VDS=10 V, ID
Aplications
Applications
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
2SK1058
Referências específicas
- MPN
- 2SK1058
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