- Out-of-Stock
2SK1058
$13.13
No tax
2SK1058
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
- Silicon N Channel MOS FET
- Good frequency characteristic
- High speed switching
- Wide area of safe operation
- Enhancement-mode
- Good complementary characteristic
- Equipped with gate protection diodes
- Suitable foe audio power amplifier
- Low drain-source ON resistance : RDS (ON)= 3.0 Ohms (typ.)
- High forward transfer admittance : Yfs = 2.0 S (typ.)
- Low leakage current : IDSS= 300uA (max) (VDS=800 V)
- Enhancement mode : Vth = 1.5 to 3.5 V (VDS=10 V, ID
Aplications
- Applications
- Low frequency power amplifier
- Complementary pair with 2SJ160, 2SJ161 and 2SJ162
2SK1058
Specific References
- MPN
- 2SK1058
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