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Silicon N-Channel MOS
Low drain-source ON resistance : RDS(ON) = 0.21 Ohms (typ)
High forward transfer admittance : Yfs = 14 S (typ)
Low leakage current : IDDS = 100 uA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0-4.0 V (VDS = 10 V , ID = 1 mA)
Applications
Switching Regulator