- On request
MBN2400E17D
$ 708,75
Sem imposto
MBN2400E17D
Política de seguridad
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Features
Silicon N-channel IGBT MODULE
High speed, low loss IGBT module due to LiPT Trench Technology
Low noise due to ultra soft fast recovery diode (U-SFD)
High reverse recovery capability (HiRC)
High thermal fatigue durability (Tc=70K, N 30,000 cycles)
Isolated heat sink (terminal to base)
Aplications
Semiconductors High Power Equipment Repair
MBN2400E17D
Referências específicas
- MPN
- MBN2400E17D
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