- On request
MODULOS IGBT DE CANAL N
Última actualización
300A/1000V/1U
No Identificado
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SILICON N CHANNEL IGBT
High Input Impedance
High Speed : tf=1.0us(Max.)
trr=0.5us(Max.)
Low Saturation Voltage : VCE(sat)=5.0V(Max:)
Enhancement-Mode
The Electrodes are isolated from case
Applications
High Power Switching
Motor Control