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MIG10J503H

35,80 $
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MODULOS DE POTENCIA

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DatasheetMIG10J503H

10A/500V/6U

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Features

  • INTELLIGENT POWER MODULE
  • The 4th generation trench gate thin wafer
  • NPT IGBT is adopted
  • FRD is built in
  • The level shift circuit by high-voltage IC
  • built in
  • The simplification of a high side driver power
  • supply is possible by the bootstrap system
  • Short Circuit Protection, Over Temperature
  • protection and the Power Supply Under Voltage
  • Protection function are built in
  • Short Circuit protection and Over Temperature
  • Protection state are outputted
  • The lower arm emitter terminal has been
  • independent by each phase for the purpose of
  • the current detection at the time of vector control
  • Low thermal resistance by adoption of original
  • high thermal conduction resin
  • Since this product is MOS structure, it should be
  • careful of static electricity in the case of handling

Aplications

  • Semiconductors High Power Equipment Repair

Toshiba * Intelligent Power Module (IPM)

Toshiba

MIG10J503H

IPM, SIX-PACK, 600V, 10A

MIG10J503H

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Hersteller-Teilenummer (MPN)
MIG10J503H
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