MIG10J503H

INTELLIGENT POWER MODULE

The 4th generation trench gate thin wafer

NPT IGBT is adopted

FRD is built in

The level shift circuit by high-voltage IC

built in

The simplification of a high side driver power

supply is possible by the bootstrap system

Short Circuit Protection, Over Temperature

protection and the Power Supply Under Voltage

Protection function are built in

Short Circuit protection and Over Temperature

Protection state are outputted

The lower arm emitter terminal has been

independent by each phase for the purpose of

the current detection at the time of vector control

Low thermal resistance by adoption of original

high thermal conduction resin

Since this product is MOS structure, it should be

careful of static electricity in the case of handling

Semiconductors High Power Equipment Repair