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MIG10J503H
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  • MIG10J503H

MIG10J503H

$35.80
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MODULOS DE POTENCIA

Última actualización

DatasheetMIG10J503H

10A/500V/6U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

INTELLIGENT POWER MODULE

The 4th generation trench gate thin wafer

NPT IGBT is adopted

FRD is built in

The level shift circuit by high-voltage IC

built in

The simplification of a high side driver power

supply is possible by the bootstrap system

Short Circuit Protection, Over Temperature

protection and the Power Supply Under Voltage

Protection function are built in

Short Circuit protection and Over Temperature

Protection state are outputted

The lower arm emitter terminal has been

independent by each phase for the purpose of

the current detection at the time of vector control

Low thermal resistance by adoption of original

high thermal conduction resin

Since this product is MOS structure, it should be

careful of static electricity in the case of handling

Aplications

Semiconductors High Power Equipment Repair

Toshiba * Intelligent Power Module (IPM)

Toshiba

MIG10J503H

IPM, SIX-PACK, 600V, 10A

MIG10J503H

Specific References

MPN
MIG10J503H
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