- On request
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Última actualización
23A/500V/1U
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N-CHANNEL SILICON POWER MOSFET
Maintains both low power loss and low noise
Lower RDS(ON) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0 +- 0.5V)
High avalanche durability
Applications
Switching regulators
DC-DC converters