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MTE53N50E
44,63 $
steuerfrei
MTE53N50E
Política de seguridad
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Features
TMOS POWER FET
2500 V RMS Isolated Isotop Package
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time
Compatible to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
Very Low Internal Parasitic Inductance
IDSS and VDS(on) Specified at Elevated Temperature
U.L. Recognized, File #E69369
Aplications
Semiconductors High Power Equipment Repair
MTE53N50E
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- MTE53N50E
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