- On request
MTE53N50E
$44.63
No tax
MTE53N50E
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
TMOS POWER FET
2500 V RMS Isolated Isotop Package
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time
Compatible to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
Very Low Internal Parasitic Inductance
IDSS and VDS(on) Specified at Elevated Temperature
U.L. Recognized, File #E69369
Aplications
Semiconductors High Power Equipment Repair
MTE53N50E
Specific References
- MPN
- MTE53N50E
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