- On request
IRFB4229
$7.88
No tax
IRFB4229
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
HEXFET Power MOSFET
Advanced process Technologt
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low Epulse Rating to Reduce Power Dissipation in PDP Sustain, Energy recovery and Pass Switch Applications
Low QG for Fast Responce
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175 C Operating Juntion Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Class-D Audio Amplifier 300W-500W (Half-bridge)
Aplications
Semiconductors High Power Equipment Repair
IRFB4229
Specific References
- MPN
- IRFB4229
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