- On request
IRFB4229
7,88 $
Nessuna tassa
IRFB4229
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
HEXFET Power MOSFET
Advanced process Technologt
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low Epulse Rating to Reduce Power Dissipation in PDP Sustain, Energy recovery and Pass Switch Applications
Low QG for Fast Responce
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175 C Operating Juntion Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Class-D Audio Amplifier 300W-500W (Half-bridge)
Aplications
Semiconductors High Power Equipment Repair
IRFB4229
Riferimenti Specifici
- MPN
- IRFB4229
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