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IRG4RC10S
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  • IRG4RC10S

IRG4RC10S

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DatasheetIRG4RC10S

14A/600V/1U

No identificado

Delivery time :

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • INSULATED GATE BIPOLAR TRANSISTOR
  • Extremely low voltage drop ; 1.0V typical 2A, 100u00c2u00b0C
  • Estu00c3u00a1ndar : Optimized for minimum saturation
  • voltage and low operating frequencies ( < 1kHz)
  • Generation 4 IGBT design provides tighter parameter
  • distribution and higher efficiency than previous generation
  • Industry standar TO-252AA package

Aplications

  • Semiconductors High Power Equipment Repair
IRG4RC10S

Specific References

MPN
IRG4RC10S
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