- On request
IRG4RC10S
$ 7,89
Sem imposto
IRG4RC10S
Política de seguridad
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Features
INSULATED GATE BIPOLAR TRANSISTOR
Extremely low voltage drop ; 1.0V typical 2A, 100u00c2u00b0C
Estu00c3u00a1ndar : Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than previous generation
Industry standar TO-252AA package
Aplications
Semiconductors High Power Equipment Repair
IRG4RC10S
Referências específicas
- MPN
- IRG4RC10S
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