• On request
MG75Q2YS11
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  • MG75Q2YS11
  • MG75Q2YS11

MG75Q2YS11

$65.75
No tax

MODULO TRANSISTOR DE POTENCIA DE SWITCHEO

Última actualización

DatasheetMG75Q2YS11

75A/1200V/2U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

High input impedance

High speed :

tf = 1.0us (Max.)

trr = 0.5us (Max.)

Low saturation VCE(sat)=2.7V (Max.)

Enhancement mode

The electrodes are isolated from case

Includes a complete half btidge card

in one package

Aplications

Applications

High Power Switching

Motor Control

MG75Q2YS11

Specific References

MPN
MG75Q2YS11
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