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MG75Q2YS11
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  • MG75Q2YS11
  • MG75Q2YS11

MG75Q2YS11

$ 65,75
Sem imposto

MODULO TRANSISTOR DE POTENCIA DE SWITCHEO

Última actualización

DatasheetMG75Q2YS11

75A/1200V/2U

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Quantidade
On request

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Features

SILICON N CHANNEL IGBT MODULE

High input impedance

High speed :

tf = 1.0us (Max.)

trr = 0.5us (Max.)

Low saturation VCE(sat)=2.7V (Max.)

Enhancement mode

The electrodes are isolated from case

Includes a complete half btidge card

in one package

Aplications

Applications

High Power Switching

Motor Control

MG75Q2YS11

Referências específicas

MPN
MG75Q2YS11
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