- On request
MODULOS IGBT DE CANAL N
Última actualización
25A/1200V/2U
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SILICON N CHANNEL IGBT MODULE
High Input Impedance
High Speed : tf = 0.5us (Max.)
trr =0.5us (Max.)
Low Saturation Voltage :
VCE(sat) = 4.0 V (Max.)
Enhancement-Mode
Includes a Complete Half Bridge in
one Package
The Electrodes are Isolated from Case
Applications
High Power Switching
Motor Control
Toshiba
MG25Q2YS40
IGBT 25A 1200V DUAL