MG25Q2YS40

• SILICON N CHANNEL IGBT MODULE
• Features
• High Input Impedance
• High Speed : tf = 0.5us (Max.)
• trr =0.5us (Max.)
• Low Saturation Voltage :
• VCE(sat) = 4.0 V (Max.)
• Enhancement-Mode
• Includes a Complete Half Bridge in
• one Package
• The Electrodes are Isolated from Case

• Applications
• High Power Switching
• Motor Control

Marca:

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Características electricas: 25A/1200V/2U

Toshiba * Transistor

Télefonos: (55) 70 30 13 43 o (55) 68 23 09 08

E-mail: ventas@ims-refacciones-industriales.com