- On request
MG300Q1US11
$94.50
No tax
MODULOS IGBT DE CANAL N
Última actualización
MG300Q1US11300A/1200V/1U
No Identificado
Delivery time :
Política de seguridad
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Política de entrega
(Delivery 1-2 days for products in stock)
Features
SILICON N CHANNEL IGBT MODULE
High input impedance
High speed :
tf= 1.0us (Max.) trr=0.5us (Max.)
Low saturation voltage :
VCE(sat) = 2.7V (Max.)
Enhancement mode
The electrodes are isolated from case
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG300Q1US11
TRANSISTOR
MG300Q1US11
Specific References
- MPN
- MG300Q1US11
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MODULOS IGBT DE CANAL N
Última actualización
300A/1200V/1U
No Identificado
Delivery time :