- On request
MODULOS IGBT DE CANAL N
Última actualización
75A/1200V/2U
No Identificado
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SILICON N CHANNEL IGBT MODULE
High input impedance
High speed :
tf = 0.3us (Max.) @ Inductive load
Low saturation voltage :
VCE(sat) = 3.6 V (Max.)
Enhancement-mode
Includes a complete half bridge in
one package
The electrodes are Isolated
from case
Applications
High Power Switching
Motor Control