• On request
MG75Q2YS51
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  • MG75Q2YS51
  • MG75Q2YS51

MG75Q2YS51

$126.00
No tax

MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG75Q2YS51

75A/1200V/2U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

High input impedance

High speed :

tf = 0.3us (Max.) @ Inductive load

Low saturation voltage :

VCE(sat) = 3.6 V (Max.)

Enhancement-mode

Includes a complete half bridge in

one package

The electrodes are Isolated

from case

Aplications

Applications

High Power Switching

Motor Control

MG75Q2YS51

Specific References

MPN
MG75Q2YS51
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