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MG500Q1US11
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  • MG500Q1US11

MG500Q1US11

$136.50
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG500Q1US11

500A/1200V/1U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

High Input Impedance

High Speed :

tf=1.0us (Max.) trr=0.5us (Max.)

Low Saturation Voltage :

VCE(sat) = 2.7V (Max.)

Enhancement-Mode

The electrodes are isolated from case

Aplications

Applications

High Power Switching

Motor Control

Toshiba * Transistor

Toshiba

MG500Q1US11

IGBT 500A 1200V SINGLE

MG500Q1US11

Specific References

MPN
MG500Q1US11
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