- On request
MG500Q1US11
136,50 $
Nessuna tassa
MODULOS IGBT DE CANAL N
Última actualización
MG500Q1US11500A/1200V/1U
No Identificado
Delivery time :
Política de seguridad
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Features
SILICON N CHANNEL IGBT MODULE
High Input Impedance
High Speed :
tf=1.0us (Max.) trr=0.5us (Max.)
Low Saturation Voltage :
VCE(sat) = 2.7V (Max.)
Enhancement-Mode
The electrodes are isolated from case
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG500Q1US11
IGBT 500A 1200V SINGLE
MG500Q1US11
Riferimenti Specifici
- MPN
- MG500Q1US11
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Prodotti visti
MODULOS IGBT DE CANAL N
Última actualización
500A/1200V/1U
No Identificado
Delivery time :