- On request
MG50Q1BS1
$47.25
No tax
MODULOS IGBT DE CANAL N
Última actualización
MG50Q1BS150A/1200V/1U
No Identificado
Delivery time :
Política de seguridad
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Features
INSULATED GATE BIPOLAR TRANSISTOR
High Input Impedance
High Speed : tr = 0.5 us (Max.)
Low Saturation Voltage : VCE(sat) = 4.0 V (Max.)
Enhancement-Mode
The Electrodes are Isolated from Case
Aplications
Applications
High Power Switching
Motor Control
MG50Q1BS1
Specific References
- MPN
- MG50Q1BS1
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MODULOS IGBT DE CANAL N
Última actualización
50A/1200V/1U
No Identificado
Delivery time :