MODULOS IGBT DE CANAL N
Última actualización 2021-12-16 14:51:29
DatasheetMG50Q1BS1
50A/1200V/1U
No Identificado
Delivery time :
(Our products have limited warranty, please check our terms)
(Delivery 1-2 days for products in stock)
INSULATED GATE BIPOLAR TRANSISTOR
High Input Impedance
High Speed : tr = 0.5 us (Max.)
Low Saturation Voltage : VCE(sat) = 4.0 V (Max.)
Enhancement-Mode
The Electrodes are Isolated from Case
Applications
High Power Switching
Motor Control
Specific References
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