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2SJ412
$5.25
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TRANSISTOR MOSFET DE POTENCIA
Última actualización
2SJ41216A/100V/1U
No Identificado
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Features
Silicon P Channel MOS Type
4-V gate drive
Low drain-source ON resistance: RDS(ON)=0.15 Ohms (typ.)
High forward transfer admittance : Yfs =7.7 S (typ.)
Low leakage current : IDSS=-100 uA (max) (VDS=100V)
Enhancement mode : Vth= -8 to -2.0 V (VDS= -10 V, ID= -1 mA)
Aplications
Semiconductors High Power Equipment Repair
2SJ412
Specific References
- MPN
- 2SJ412
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TRANSISTOR MOSFET DE POTENCIA
Última actualización
16A/100V/1U
No Identificado
Delivery time :