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Silicon N Chanel Field Effect Transistor
4-Volts Gate Drive
Low Drain-Source ON Resistance-RDS(ON) = 0.068 Ohms (Typ.)
High Forward Transfer Admittance Yfs = 11S (Typ.)
Low Leakage Current IDSS = 100 uA (Max.) @ VDS = 100 V
Enhancement-Mode
VTH = 0.8 - 2.0 V @ VDS = 10V, ID = 1 mA
Semiconductors High Power Equipment Repair