- On request
(Our products have limited warranty, please check our terms)
(Delivery 1-2 days for products in stock)
N-CHANNEL POWER MOS FET
Low On-state Resistance
RDS(on)1 = 28mOhms MAX. (VGS = 110 V, Io = 15 A)
RDS(on)2 = 45 mOhms, Io = 15 A)
Low Ciss : Ciss = 1500 pF TYP:
Built-in Gate Protection Diode
TO-251/TO-252 package
Semiconductors High Power Equipment Repair