- On request
MJ900
$5.25
No tax
MJ900
Política de seguridad
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Features
Silicon PNP Darlington Power Transistor
Collector-Emitter Breakdown Voltage-
V(BR)CEO = 60 V (Min.)
High DC Current Gain-
hfe = 1000 (Min.) @ Ic = 3 A
Low Collector Saturation Voltage-
VCE(sat) = -2.0 V (Max.) @ Ic = 3 A
Aplications
Applications
General purpose amplifier applications
Miscellaneous * Semiconductor
Miscellaneous
MJ900
Semiconductor
MJ900
Specific References
- MPN
- MJ900
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