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TRANSISTOR MOSFET DE POTENCIA
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25W/7pin
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The MR4000/5000 Series incorporate the following main features
Use of second-generation high-speed IGBTs and CoolMOS devices
improves efficiency
Reduction of control IC loss improves standby characteristic
Same control functions as predecessor MR2000 Series, enabling
simple device design
Higher efficiency, low noise
The high-speed IGBTs developed by Shindengen are elements with
an original patented structure
The first-generation high-speed IGBT was released in the MR2000
Series. The second-generation high-speed IGBT altered the internal
structure of the first-generation model, improving on its saturation
characteristic and tail loss tradeoff characterisic. These improvements
further reduced the tail loss of the second-generation high-speed IGBT while maintaining the same saturation characteristic as the first-
generation model
Figure 2 compares the tail loss waveform of the first-and second-
generation high-speed IGBTs. After subtracting a 10 uJ loss
(corresponding to the juntion capacitance), the tail is reduced by
roughly half, from 77 to 39 uJ
( 1) Higher output capacity with FTO package
(Po for MR4040 [ FTO-7P ] = up to 180 W)
( 2 ) FTO package 7-pin configuration allows for distance between high-voltage pins
( 3 ) Use of second-generation high-speed IGBT with 900 V withstand voltage improves efficiency
( 4 ) Supports standby mode (pin at no load is about 60 mW)
Applications
DVD recordes
LCD TVs
Digital set top boxes
Multifunction printers