- On request
2SK1119
$ 7,89
Sem imposto
2SK1119
Política de seguridad
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Features
Silicon N Channel MOS FET
Low drain-source ON resistance : RDS (ON)= 3.0 Ohms (typ.)
High forward transfer admittance : Yfs = 2.0 S (typ.)
Low leakage current : IDSS= 300uA (max) (VDS=800 V)
Enhancement mode : Vth = 1.5 to 3.5 V (VDS=10 V, ID= 1 mA)
Aplications
Semiconductors High Power Equipment Repair
2SK1119
Referências específicas
- MPN
- 2SK1119
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