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Silicon N-Channel MOS Transistor
Low drain-source ON resistance : RDS (ON) = 1.0 Ohms (typ.)
High forward transfer admittance : YFS = 7.0 S (typ.)
Low leakage current : IDSS = 100uA (max.) (VDS = 720 V)
Enhancement model : Vth = 2.0 - 4.0 V (VDS = 10 v, ID = 1mA)
Applications
Switching Regulator