- On request
MODULOS IGBT DE CANAL N
Última actualización
25A/1200V/6U
No Identificado
Delivery time :
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SILICON N CHANNEL IGBT MODULE
The Electrodes are Isolated from Case
6 IGBTs are Built Into 1 Package
Enhancement-Mode
Low Saturation Voltage :
VCE (sat) = 4.0V (Max.)
High Speed :
tf=0.5us (Max.)
trr=0.5us (Max.)
Applications
High Power Switching
Motor Control