• On request

IKW50N60H3

$10.50
No tax

MODULOS IGBT TRANSISTOR BIPOLAR

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DatasheetIKW50N60H3

50A/600V/1U

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Quantity
On request

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Features

IGBT in Trench and Fieldstop technology

Very low VCE(sat)

Low EMI

Very soft, fast recovery anti-parallel diode

maximum juntion temperature 175 C

qualified accoirding to JEDEC for target applications

Pb-free lead plating ; RoHS compliant

complete product spectrum and PSpice Models

Aplications

Applications

welding converters

converters with high switching frequency

IKW50N60H3

Specific References

MPN
IKW50N60H3
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