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IKW50N60H3

$10.50
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MODULOS IGBT TRANSISTOR BIPOLAR

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DatasheetIKW50N60H3

50A/600V/1U

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Features

  • IGBT in Trench and Fieldstop technology
  • Very low VCE(sat)
  • Low EMI
  • Very soft, fast recovery anti-parallel diode
  • maximum juntion temperature 175 C
  • qualified accoirding to JEDEC for target applications
  • Pb-free lead plating ; RoHS compliant
  • complete product spectrum and PSpice Models

Aplications

  • Applications
  • welding converters
  • converters with high switching frequency
IKW50N60H3

Specific References

MPN
IKW50N60H3
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